FZ1500R33HE3C1BPSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-IHVB19
$100,000.00
Available to order
Reference Price (USD)
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$99999.99999
500+
$98999.9999901
1000+
$97999.9999902
1500+
$96999.9999903
2000+
$95999.9999904
2500+
$94999.9999905
Exquisite packaging
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Optimize your power systems with Infineon Technologies's FZ1500R33HE3C1BPSA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FZ1500R33HE3C1BPSA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FZ1500R33HE3C1BPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1500 A
- Power - Max: 2.4 MW
- Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190
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