FZ2400R12HE4B9NPSA1
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
$866.48
Available to order
Reference Price (USD)
1+
$866.48000
500+
$857.8152
1000+
$849.1504
1500+
$840.4856
2000+
$831.8208
2500+
$823.156
Exquisite packaging
Discount
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Optimize your power systems with the FZ2400R12HE4B9NPSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FZ2400R12HE4B9NPSA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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