IXA20RG1200DHG-TUB
IXYS
IXYS
IGBT 1200V 32A 125W SMPD
$10.81
Available to order
Reference Price (USD)
1+
$10.81050
500+
$10.702395
1000+
$10.59429
1500+
$10.486185
2000+
$10.37808
2500+
$10.269975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXA20RG1200DHG-TUB Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXA20RG1200DHG-TUB ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXA20RG1200DHG-TUB into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 32 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 125 W
- Switching Energy: 1.55mJ (on), 1.7mJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 15A, 56Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 9-SMD Module
- Supplier Device Package: ISOPLUS-SMPD™.B
Related Products
IXYS
IXYH120N65C3
Harris Corporation
HGTP12N60C3R
Infineon Technologies
IRGP6650DPBF
onsemi
NGB8204ANT4G
onsemi
FGH75T65UPD-F155
Infineon Technologies
IKW40N120CS7XKSA1
onsemi
FGD1240G2
Infineon Technologies
FD300R07PE4_B6
IXYS
IXYN120N65B3D1
Rohm Semiconductor