HGTD10N50F1
Harris Corporation
Harris Corporation
10A, 500V N-CHANNEL IGBT
$1.67
Available to order
Reference Price (USD)
1+
$1.67000
500+
$1.6533
1000+
$1.6366
1500+
$1.6199
2000+
$1.6032
2500+
$1.5865
Exquisite packaging
Discount
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Experience top-tier performance with the HGTD10N50F1 Single IGBT transistor from Harris Corporation. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTD10N50F1 ensures energy efficiency and reliability. Trust Harris Corporation's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.4 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: I-PAK
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