HGTP12N60C3R
Harris Corporation
Harris Corporation
24A, 600V N-CHANNEL IGBT
$1.16
Available to order
Reference Price (USD)
1+
$1.16000
500+
$1.1484
1000+
$1.1368
1500+
$1.1252
2000+
$1.1136
2500+
$1.102
Exquisite packaging
Discount
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Discover the HGTP12N60C3R Single IGBT transistor by Harris Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGTP12N60C3R ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGTP12N60C3R for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 400µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 71 nC
- Td (on/off) @ 25°C: 37ns/120ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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