IQE050N08NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-TSON-8
$3.19
Available to order
Reference Price (USD)
1+
$3.19000
500+
$3.1581
1000+
$3.1262
1500+
$3.0943
2000+
$3.0624
2500+
$3.0305
Exquisite packaging
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The IQE050N08NM5ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IQE050N08NM5ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 101A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-4
- Package / Case: 8-PowerTDFN
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