GT50J121(Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
IGBT 600V 50A 240W TO3P LH
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The GT50J121(Q) Single IGBT transistor by Toshiba Semiconductor and Storage is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The GT50J121(Q) ensures precise power control and long-term stability. With Toshiba Semiconductor and Storage's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate GT50J121(Q) into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
- Power - Max: 240 W
- Switching Energy: 1.3mJ (on), 1.34mJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 90ns/300ns
- Test Condition: 300V, 50A, 13Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(LH)
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