GT50JR21(STA1,E,S)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN(OS
$4.19
Available to order
Reference Price (USD)
1+
$4.18800
500+
$4.14612
1000+
$4.10424
1500+
$4.06236
2000+
$4.02048
2500+
$3.9786
Exquisite packaging
Discount
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Enhance your electronic projects with the GT50JR21(STA1,E,S) Single IGBT transistor from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the GT50JR21(STA1,E,S) ensures precision and reliability. Toshiba Semiconductor and Storage's cutting-edge technology guarantees a component that meets the highest industry standards. Choose GT50JR21(STA1,E,S) for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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