IXXH80N65B4D1
IXYS
IXYS
DISC IGBT XPT-GENX4 TO-247AD
$11.20
Available to order
Reference Price (USD)
1+
$11.20000
500+
$11.088
1000+
$10.976
1500+
$10.864
2000+
$10.752
2500+
$10.64
Exquisite packaging
Discount
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Optimize your power systems with the IXXH80N65B4D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXXH80N65B4D1 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 180 A
- Current - Collector Pulsed (Icm): 430 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
- Power - Max: 625 W
- Switching Energy: 3.36mJ (on), 1.83mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 26ns/112ns
- Test Condition: 400V, 80A, 3Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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