IXXX140N65B4H1
IXYS
IXYS
IGBT
$17.57
Available to order
Reference Price (USD)
30+
$13.07300
Exquisite packaging
Discount
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The IXXX140N65B4H1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXXX140N65B4H1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXXX140N65B4H1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 340 A
- Current - Collector Pulsed (Icm): 840 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
- Power - Max: 1200 W
- Switching Energy: 5.75mJ (on), 2.67mJ (off)
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 54ns/270ns
- Test Condition: 400V, 100A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 105 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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