FGHL50T65MQDT
onsemi
onsemi
FS4 MID SPEED IGBT 650V 50A TO24
$5.37
Available to order
Reference Price (USD)
1+
$5.37000
500+
$5.3163
1000+
$5.2626
1500+
$5.2089
2000+
$5.1552
2500+
$5.1015
Exquisite packaging
Discount
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Upgrade your power management systems with the FGHL50T65MQDT Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGHL50T65MQDT provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGHL50T65MQDT for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 268 W
- Switching Energy: 1.19mJ (on), 630µJ (off)
- Input Type: Standard
- Gate Charge: 99 nC
- Td (on/off) @ 25°C: 21ns/90ns
- Test Condition: 400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr): 79 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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