HAT1096C-EL-E
Renesas
Renesas
HAT1096C - P-CHANNEL POWER MOSFE
$0.21
Available to order
Reference Price (USD)
1+
$0.20634
500+
$0.2042766
1000+
$0.2022132
1500+
$0.2001498
2000+
$0.1980864
2500+
$0.196023
Exquisite packaging
Discount
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The HAT1096C-EL-E by Renesas is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the HAT1096C-EL-E is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 293mOhm @ 500µA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 790mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 6-CMFPAK
- Package / Case: 6-SMD, Flat Leads
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