HGT1S20N60C3R
Harris Corporation
Harris Corporation
40A, 600V, RUGGED N-CHANNEL IGBT
$1.80
Available to order
Reference Price (USD)
1+
$1.80000
500+
$1.782
1000+
$1.764
1500+
$1.746
2000+
$1.728
2500+
$1.71
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the HGT1S20N60C3R Single IGBT transistor by Harris Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGT1S20N60C3R ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGT1S20N60C3R for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 164 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 116 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
Related Products
Microchip Technology
APT36GA60SD15
onsemi
FGH20N60SFDTU
Infineon Technologies
IGW50N65H5AXKSA1
Infineon Technologies
AIKW75N60CTXKSA1
Diodes Incorporated
DGTD120T25S1PT
Infineon Technologies
IGP40N65F5XKSA1
Alpha & Omega Semiconductor Inc.
AOK40B65H1
onsemi
MGP4N60E
Infineon Technologies
IKB10N60TATMA1
Infineon Technologies