HGT1S3N60B3S
Harris Corporation
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
$0.52
Available to order
Reference Price (USD)
1+
$0.52000
500+
$0.5148
1000+
$0.5096
1500+
$0.5044
2000+
$0.4992
2500+
$0.494
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGT1S3N60B3S by Harris Corporation is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGT1S3N60B3S delivers robust performance. Harris Corporation's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGT1S3N60B3S into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 7 A
- Current - Collector Pulsed (Icm): 20 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
- Power - Max: 33.3 W
- Switching Energy: 66µJ (on), 88µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 18ns/105ns
- Test Condition: 480V, 3.5A, 82Ohm, 15V
- Reverse Recovery Time (trr): 16 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
Related Products
Renesas Electronics America Inc
RJP43F4ADPP-MB#T2F
IXYS
IXYK120N120B3
Rohm Semiconductor
RGW60TS65EHRC11
Infineon Technologies
F3L300R12MT4_B23
Infineon Technologies
FZ2400R12HE4B9NPSA1
Harris Corporation
HGTG20N100D2
IXYS
IXYX50N170C
Toshiba Semiconductor and Storage
GT20J341,S4X(S
Harris Corporation
HGTD10N50F1
IXYS