RGW60TS65EHRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$7.12
Available to order
Reference Price (USD)
1+
$7.12000
500+
$7.0488
1000+
$6.9776
1500+
$6.9064
2000+
$6.8352
2500+
$6.764
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGW60TS65EHRC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGW60TS65EHRC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 178 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 84 nC
- Td (on/off) @ 25°C: 37ns/101ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 146 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
Infineon Technologies
F3L300R12MT4_B23
Infineon Technologies
FZ2400R12HE4B9NPSA1
Harris Corporation
HGTG20N100D2
IXYS
IXYX50N170C
Toshiba Semiconductor and Storage
GT20J341,S4X(S
Harris Corporation
HGTD10N50F1
IXYS
MMIX1Y100N120C3H1
Rohm Semiconductor
RGW80TS65HRC11
IXYS
IXA20RG1200DHG-TUB
IXYS