FGH75T65UPD-F155
onsemi
onsemi
650V,75A FIELD STOP TRENCH IGBT
$4.23
Available to order
Reference Price (USD)
450+
$5.35500
Exquisite packaging
Discount
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Enhance your electronic projects with the FGH75T65UPD-F155 Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGH75T65UPD-F155 ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGH75T65UPD-F155 for efficient and durable power solutions.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Power - Max: 375 W
- Switching Energy: 3.68mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 42ns/216ns
- Test Condition: 400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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