HGTG30N60C3
Harris Corporation
Harris Corporation
63A, 600V, UFS N-CHANNEL IGBT
$2.24
Available to order
Reference Price (USD)
1+
$2.24000
500+
$2.2176
1000+
$2.1952
1500+
$2.1728
2000+
$2.1504
2500+
$2.128
Exquisite packaging
Discount
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Discover the HGTG30N60C3 Single IGBT transistor by Harris Corporation, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the HGTG30N60C3 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the HGTG30N60C3 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 63 A
- Current - Collector Pulsed (Icm): 252 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
- Power - Max: 208 W
- Switching Energy: 1.05mJ (on), 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 40ns/320ns
- Test Condition: 480V, 30A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247 (TO-274AA)
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