HGTG34N100E2
Harris Corporation
Harris Corporation
55A, 1000V N-CHANNEL IGBT
$7.54
Available to order
Reference Price (USD)
1+
$7.54000
500+
$7.4646
1000+
$7.3892
1500+
$7.3138
2000+
$7.2384
2500+
$7.163
Exquisite packaging
Discount
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Optimize your power systems with the HGTG34N100E2 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the HGTG34N100E2 delivers consistent and reliable operation. Trust Harris Corporation's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 34A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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