RJH65T04BDPMA0#T2F
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 60A TO-3PFP
$6.99
Available to order
Reference Price (USD)
1+
$6.99000
500+
$6.9201
1000+
$6.8502
1500+
$6.7803
2000+
$6.7104
2500+
$6.6405
Exquisite packaging
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Optimize your power systems with the RJH65T04BDPMA0#T2F Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RJH65T04BDPMA0#T2F delivers consistent and reliable operation. Trust Renesas Electronics America Inc's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
- Power - Max: 65 W
- Switching Energy: 360µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 74 nC
- Td (on/off) @ 25°C: 35ns/125ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-94
- Supplier Device Package: TO-3PFP
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