MMIX1Y82N120C3H1
IXYS
IXYS
DISC IGBT SMPD PKG-STANDARD SMPD
$42.98
Available to order
Reference Price (USD)
1+
$42.97600
500+
$42.54624
1000+
$42.11648
1500+
$41.68672
2000+
$41.25696
2500+
$40.8272
Exquisite packaging
Discount
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The MMIX1Y82N120C3H1 Single IGBT transistor by IXYS is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the MMIX1Y82N120C3H1 provides consistent performance in varied conditions. Rely on IXYS's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 78 A
- Current - Collector Pulsed (Icm): 320 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 82A
- Power - Max: 320 W
- Switching Energy: 4.95mJ (on), 2.78mJ (off)
- Input Type: Standard
- Gate Charge: 215 nC
- Td (on/off) @ 25°C: 29ns/192ns
- Test Condition: 600V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr): 78 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
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