IXBA16N170AHV-TRL
IXYS
IXYS
DISC IGBT BIMOSFET-HIGH VOLT TO-
$39.43
Available to order
Reference Price (USD)
1+
$39.43095
500+
$39.0366405
1000+
$38.642331
1500+
$38.2480215
2000+
$37.853712
2500+
$37.4594025
Exquisite packaging
Discount
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Enhance your electronic projects with the IXBA16N170AHV-TRL Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXBA16N170AHV-TRL ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXBA16N170AHV-TRL for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 15ns/160ns
- Test Condition: 1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 360 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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