HGTH20N50E1D
Harris Corporation
Harris Corporation
20A, 500V, N-CHANNEL IGBT
$3.14
Available to order
Reference Price (USD)
1+
$3.14000
500+
$3.1086
1000+
$3.0772
1500+
$3.0458
2000+
$3.0144
2500+
$2.983
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the HGTH20N50E1D Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGTH20N50E1D ensures precision and reliability. Harris Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGTH20N50E1D for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 35 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 35A
- Power - Max: 100 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3 Isolated Tab, TO-218AC
- Supplier Device Package: TO-218 Isolated
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