IGB30N60H3ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 60A 187W TO263-3
$3.10
Available to order
Reference Price (USD)
1,000+
$1.48014
2,000+
$1.40966
Exquisite packaging
Discount
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Upgrade your power management systems with the IGB30N60H3ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGB30N60H3ATMA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGB30N60H3ATMA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 187 W
- Switching Energy: 1.17mJ
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 18ns/207ns
- Test Condition: 400V, 30A, 10.5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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