RGTH00TS65GC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V
$6.47
Available to order
Reference Price (USD)
1+
$6.47000
500+
$6.4053
1000+
$6.3406
1500+
$6.2759
2000+
$6.2112
2500+
$6.1465
Exquisite packaging
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The RGTH00TS65GC13 Single IGBT transistor by Rohm Semiconductor is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RGTH00TS65GC13 provides consistent performance in varied conditions. Rely on Rohm Semiconductor's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 277 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 39ns/143ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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