IGC27T120T8QX1SA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 25A DIE
$0.00
Available to order
Reference Price (USD)
1+
$6.59000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IGC27T120T8QX1SA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IGC27T120T8QX1SA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IGC27T120T8QX1SA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 25A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Toshiba Semiconductor and Storage
GT50J121(Q)
Infineon Technologies
IRGC50B60KB
Infineon Technologies
SIGC10T60EX1SA3
IXYS
FID35-06C
Renesas Electronics America Inc
RJH65WSJSP-00#YJ1
Harris Corporation
HGTP14N0FVLR4600
Infineon Technologies
IGC13T120T8LX1SA1
Infineon Technologies
SIGC28T65EX1SA1
onsemi
PCRU3020W
Motorola