IGN1214L500B
Integra Technologies Inc.
Integra Technologies Inc.
GAN, RF POWER TRANSISTOR, L-BAND
$1,018.30
Available to order
Reference Price (USD)
1+
$1018.30000
500+
$1008.117
1000+
$997.934
1500+
$987.751
2000+
$977.568
2500+
$967.385
Exquisite packaging
Discount
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The IGN1214L500B RF MOSFET transistor by Integra Technologies Inc. is a high-reliability component in the Discrete Semiconductor Products sector, specifically within Transistors - FETs, MOSFETs - RF. This transistor is optimized for high-frequency operation, offering low insertion loss, high efficiency, and excellent impedance matching. Its versatile design makes it suitable for a wide range of applications, including marine communication systems, avionics, and scientific instrumentation. The IGN1214L500B stands out for its ability to handle high power levels while maintaining signal integrity. When you choose Integra Technologies Inc.'s IGN1214L500B, you're selecting a transistor that delivers consistent performance in the most challenging RF environments.
Specifications
- Product Status: Active
- Transistor Type: HEMT
- Frequency: 1.2GHz ~ 1.4GHz
- Gain: 15dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 200 mA
- Power - Output: 650W
- Voltage - Rated: 160 V
- Package / Case: PL95A1
- Supplier Device Package: PL95A1
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