IGW15T120
Infineon Technologies
Infineon Technologies
IGW15T120 - DISCRETE IGBT WITHOU
$2.04
Available to order
Reference Price (USD)
1+
$2.04000
500+
$2.0196
1000+
$1.9992
1500+
$1.9788
2000+
$1.9584
2500+
$1.938
Exquisite packaging
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The IGW15T120 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IGW15T120 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IGW15T120 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 110 W
- Switching Energy: 1.3mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 50ns/520ns
- Test Condition: 600V, 15A, 56Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-21
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