MMIX1G320N60B3
IXYS
IXYS
MOSFET N-CH
$53.01
Available to order
Reference Price (USD)
20+
$37.50650
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the MMIX1G320N60B3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the MMIX1G320N60B3 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose MMIX1G320N60B3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 400 A
- Current - Collector Pulsed (Icm): 1000 A
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
- Power - Max: 1000 W
- Switching Energy: 2.7mJ (on), 5mJ (off)
- Input Type: Standard
- Gate Charge: 585 nC
- Td (on/off) @ 25°C: 44ns/250ns
- Test Condition: 480V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 66 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
Related Products
onsemi
FGH4L40T120LQD
IXYS
IXA20RG1200DHG-TRR
Infineon Technologies
IRG4BC40FPBF
Infineon Technologies
IKA08N65ET6XKSA1
IXYS
IXGT25N250-T/R
Harris Corporation
HGTP10N50E1D
onsemi
TIG064E8-TL-H-ON
IXYS
IXYH30N120B4
onsemi
AFGHL40T120RLD
Infineon Technologies