IKFW50N60ETXKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$6.50
Available to order
Reference Price (USD)
240+
$6.25067
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IKFW50N60ETXKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IKFW50N60ETXKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IKFW50N60ETXKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 73 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 164 W
- Switching Energy: 1.5mJ (on), 1.42mJ (off)
- Input Type: Standard
- Gate Charge: 290 nC
- Td (on/off) @ 25°C: 28ns/305ns
- Test Condition: 400V, 50A, 7Ohm, 15V
- Reverse Recovery Time (trr): 91 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-AI
Related Products
IXYS
IXA4IF1200UC-TUB
Renesas
RJH60D1DPP-E0#T2
Fairchild Semiconductor
FGR15N40A
IXYS
MMIX1X340N65B4
IXYS
IXYH75N65C3D1
Harris Corporation
HGTG32N60E2
Harris Corporation
IGT6E21
Renesas Electronics America Inc
RJP6065DPN-P1#T2
IXYS
IXYK300N65A3
Renesas Electronics America Inc