RJH60D1DPP-E0#T2
Renesas
Renesas
RJH60D1 - INSULATED GATE BIPOLAR
$1.40
Available to order
Reference Price (USD)
1+
$1.40399
500+
$1.3899501
1000+
$1.3759102
1500+
$1.3618703
2000+
$1.3478304
2500+
$1.3337905
Exquisite packaging
Discount
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The RJH60D1DPP-E0#T2 by Renesas is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Renesas's reputation for quality, the RJH60D1DPP-E0#T2 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 30 W
- Switching Energy: 100µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 13 nC
- Td (on/off) @ 25°C: 30ns/42ns
- Test Condition: 300V, 10A, 5Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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