IPI100N06S3L04XK
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 100A TO262-3
$1.27
Available to order
Reference Price (USD)
1+
$1.41000
10+
$1.19500
100+
$1.06370
Exquisite packaging
Discount
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The IPI100N06S3L04XK single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPI100N06S3L04XK is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 362 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 17270 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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