IRG4BH20K-L
Infineon Technologies
Infineon Technologies
IGBT 1200V 11A 60W TO262
$0.00
Available to order
Reference Price (USD)
250+
$2.02992
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IRG4BH20K-L Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IRG4BH20K-L ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IRG4BH20K-L into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 11 A
- Current - Collector Pulsed (Icm): 22 A
- Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
- Power - Max: 60 W
- Switching Energy: 450µJ (on), 440µJ (off)
- Input Type: Standard
- Gate Charge: 28 nC
- Td (on/off) @ 25°C: 23ns/93ns
- Test Condition: 960V, 5A, 50Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
Related Products
Infineon Technologies
AIHD04N60RATMA1
Infineon Technologies
IKP20N65F5
Infineon Technologies
IRG4PF50WPBF
Infineon Technologies
IRGP4263DPBF
Infineon Technologies
IRGS6B60KDTRRP
IXYS
IXGK60N60C2D1
Infineon Technologies
IRGI4060DPBF
IXYS
IXGK60N60
SemiQ
GPA060A060MN-FD
Infineon Technologies