IRG7PG35U-EPBF
Infineon Technologies
Infineon Technologies
IGBT 1000V 55A 210W TO247AD
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Discover the IRG7PG35U-EPBF Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IRG7PG35U-EPBF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IRG7PG35U-EPBF for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 210 W
- Switching Energy: 1.06mJ (on), 620µJ (off)
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 30ns/160ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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