IRG7PH35UD1-EP
Infineon Technologies
Infineon Technologies
IGBT 1200V 50A 179W TO247
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The IRG7PH35UD1-EP from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IRG7PH35UD1-EP for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 179 W
- Switching Energy: 620µJ (off)
- Input Type: Standard
- Gate Charge: 130 nC
- Td (on/off) @ 25°C: -/160ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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