SKB06N60ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 12A 68W TO263-3-2
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Optimize your power systems with the SKB06N60ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the SKB06N60ATMA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
- Power - Max: 68 W
- Switching Energy: 215µJ
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 25ns/220ns
- Test Condition: 400V, 6A, 50Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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