IRGB4B60KD1PBF
Infineon Technologies
Infineon Technologies
IGBT NPT 600V 11A TO220AB
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Discover the IRGB4B60KD1PBF Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IRGB4B60KD1PBF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IRGB4B60KD1PBF for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11 A
- Current - Collector Pulsed (Icm): 22 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
- Power - Max: 63 W
- Switching Energy: 73µJ (on), 47µJ (off)
- Input Type: Standard
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: 22ns/100ns
- Test Condition: 400V, 4A, 100Ohm, 15V
- Reverse Recovery Time (trr): 93 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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