RGT30TM65DGC9
Rohm Semiconductor
Rohm Semiconductor
FIELD STOP TRENCH IGBT
$2.84
Available to order
Reference Price (USD)
1+
$2.84000
500+
$2.8116
1000+
$2.7832
1500+
$2.7548
2000+
$2.7264
2500+
$2.698
Exquisite packaging
Discount
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The RGT30TM65DGC9 by Rohm Semiconductor is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RGT30TM65DGC9 delivers robust performance. Rohm Semiconductor's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RGT30TM65DGC9 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 32 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 18ns/64ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NFM
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