IXGP15N120B
IXYS
IXYS
IGBT 1200V 30A 150W TO220AB
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Reference Price (USD)
50+
$5.07940
Exquisite packaging
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Optimize your power systems with the IXGP15N120B Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGP15N120B delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
- Power - Max: 150 W
- Switching Energy: 1.75mJ (off)
- Input Type: Standard
- Gate Charge: 69 nC
- Td (on/off) @ 25°C: 25ns/180ns
- Test Condition: 960V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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