BSM300GA160DN13CB7HOSA1
Infineon Technologies
Infineon Technologies
BSM300GA160 - INSULATED GATE BIP
$119.66
Available to order
Reference Price (USD)
1+
$119.66000
500+
$118.4634
1000+
$117.2668
1500+
$116.0702
2000+
$114.8736
2500+
$113.677
Exquisite packaging
Discount
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The BSM300GA160DN13CB7HOSA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the BSM300GA160DN13CB7HOSA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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