HGTP10N40C1
Harris Corporation
Harris Corporation
10A, 400V, N-CHANNEL IGBT
$1.08
Available to order
Reference Price (USD)
1+
$1.08000
500+
$1.0692
1000+
$1.0584
1500+
$1.0476
2000+
$1.0368
2500+
$1.026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the HGTP10N40C1 Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the HGTP10N40C1 provides reliable and efficient operation. Harris Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose HGTP10N40C1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): 17.5 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Power - Max: 60 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
onsemi
MGY30N60D
Infineon Technologies
DF300R07PE4_B6
Fairchild Semiconductor
FGA30N65SMD
onsemi
NGTD23T120F2WP
Littelfuse Inc.
IXYF40N450
Infineon Technologies
IKN01N60RC2ATMA1
Infineon Technologies
SIGC109T120R3
IXYS
IXYH20N65B3
Infineon Technologies
F4-50R12MS4
Harris Corporation