MG12150W-XN2MM
Littelfuse Inc.

Littelfuse Inc.
IGBT MOD 1200V 200A 625W
$0.00
Available to order
Reference Price (USD)
1+
$206.62000
10+
$197.46300
25+
$190.92400
Exquisite packaging
Discount
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Experience next-generation power control with Littelfuse Inc.'s MG12150W-XN2MM IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MG12150W-XN2MM offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MG12150W-XN2MM in your next-generation HVDC systems or particle accelerator power supplies. Littelfuse Inc. delivers reliability where it matters most with the MG12150W-XN2MM IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 150A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module