FZ800R33KF2CNOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE 3300V 1A 9600W
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Experience next-generation power control with Infineon Technologies's FZ800R33KF2CNOSA2 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FZ800R33KF2CNOSA2 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FZ800R33KF2CNOSA2 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FZ800R33KF2CNOSA2 IGBT module.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 1 A
- Power - Max: 9600 W
- Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 100 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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