IRG7U200HF12B
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 400A POWIR 62
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's IRG7U200HF12B stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the IRG7U200HF12B enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: 1130 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR® 62 Module
- Supplier Device Package: POWIR® 62
Related Products
IXYS
MUBW50-06A8
Powerex Inc.
CM200DY-34A
Microsemi Corporation
APTGF50TDU120PG
Vishay General Semiconductor - Diodes Division
VS-40MT120UHAPBF
Powerex Inc.
CM300HA-28H
IXYS
MIO1200-33E11
Infineon Technologies
FF450R33T3E3B5P3BPSA1
Infineon Technologies
FP30R06YE3BOMA1
Microsemi Corporation
APTGT25A120D1G
Vishay General Semiconductor - Diodes Division