MUBW50-06A8
IXYS
IXYS
IGBT MODULE 600V 75A 250W E3
$0.00
Available to order
Reference Price (USD)
5+
$80.76800
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MUBW50-06A8 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MUBW50-06A8 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MUBW50-06A8 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MUBW50-06A8 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E3
- Supplier Device Package: E3
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