MSCSM170HM23CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$627.65
Available to order
Reference Price (USD)
1+
$627.65000
500+
$621.3735
1000+
$615.097
1500+
$608.8205
2000+
$602.544
2500+
$596.2675
Exquisite packaging
Discount
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Elevate your electronics with the MSCSM170HM23CT3AG from Microchip Technology, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the MSCSM170HM23CT3AG provides the reliability and efficiency you need. Microchip Technology's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
- Power - Max: 602W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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