VS-40MT120UHAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 80A 463W MTP
$0.00
Available to order
Reference Price (USD)
1+
$103.76000
15+
$98.40000
30+
$95.72267
105+
$89.02876
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay General Semiconductor - Diodes Division's VS-40MT120UHAPBF sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the VS-40MT120UHAPBF in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Vishay General Semiconductor - Diodes Division to deliver cutting-edge IGBT solutions with the VS-40MT120UHAPBF power module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 463 W
- Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.28 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
Related Products
Powerex Inc.
CM300HA-28H
IXYS
MIO1200-33E11
Infineon Technologies
FF450R33T3E3B5P3BPSA1
Infineon Technologies
FP30R06YE3BOMA1
Microsemi Corporation
APTGT25A120D1G
Vishay General Semiconductor - Diodes Division
VS-GB200LH120N
Microsemi Corporation
APTGL60DSK120T3G
Powerex Inc.
CM100BU-12H
Vishay General Semiconductor - Diodes Division
VS-GB150YG120NT
IXYS