MUN5212DW1T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SOT363
$0.24
Available to order
Reference Price (USD)
3,000+
$0.04760
6,000+
$0.04161
15,000+
$0.03563
30,000+
$0.03363
75,000+
$0.03164
150,000+
$0.02831
Exquisite packaging
Discount
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The MUN5212DW1T1G from onsemi is a versatile pre-biased BJT array designed to meet the needs of diverse electronic applications. Featuring matched transistors and built-in resistors, this product enhances circuit performance while reducing design complexity. It is commonly used in audio amplifiers, power converters, and automotive electronics. onsemi's commitment to quality ensures that the MUN5212DW1T1G operates flawlessly in both commercial and industrial settings. With its excellent thermal performance and high reliability, this transistor array is an essential component for any engineer's toolkit.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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