MWI50-12E6K
IXYS
IXYS
IGBT MODULE 1200V 51A 210W E1
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The MWI50-12E6K from IXYS is a high-performance IGBT module designed for power electronics applications. As part of the Discrete Semiconductor Products category, this transistor module offers exceptional efficiency and reliability. Key features include low saturation voltage, high-speed switching, and robust thermal performance. These IGBT modules are widely used in industrial motor drives, renewable energy systems, and electric vehicle powertrains. For example, the MWI50-12E6K is ideal for solar inverters, welding equipment, and UPS systems where high power handling is required. Choose IXYS's advanced IGBT technology for your most demanding power conversion challenges.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 51 A
- Power - Max: 210 W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 35A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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