VS-GB100TP120U
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 150A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GB100TP120U by Vishay General Semiconductor - Diodes Division redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the VS-GB100TP120U in high-efficiency servo controllers for manufacturing automation. Vishay General Semiconductor - Diodes Division combines innovation with quality in every VS-GB100TP120U module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 735 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
- Current - Collector Cutoff (Max): 2 mA
- Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
Related Products
Vishay General Semiconductor - Diodes Division
VS-GB100YG120NT
Infineon Technologies
BSM75GP60BOSA1
Microsemi Corporation
APTGT150SK170D1G
Microsemi Corporation
APTGT50A170D1G
Infineon Technologies
FP35R12KT4BOSA1
Infineon Technologies
IRG7T200CL12B
Infineon Technologies
DDB6U180N16RRB11BPSA1
Infineon Technologies
BSM25GP120B2BPSA1
Infineon Technologies
PS2GFANSET30599NOSA1
Vishay General Semiconductor - Diodes Division