MWI60-12T6K
IXYS
IXYS
IGBT MODULE 1200V 58A 200W E1
$0.00
Available to order
Reference Price (USD)
10+
$52.67200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS's MWI60-12T6K sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the MWI60-12T6K in your traction inverters or high-energy physics experiments for unparalleled performance. Trust IXYS to deliver cutting-edge IGBT solutions with the MWI60-12T6K power module.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 58 A
- Power - Max: 200 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 35A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 2.53 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
Related Products
Microsemi Corporation
APTGT35A120D1G
Powerex Inc.
CM50E3U-24H
Microsemi Corporation
APTGF75DH120TG
Microsemi Corporation
APTGV50H60T3G
Powerex Inc.
CM100TU-24H
IXYS
VDI75-12P1
IXYS
MWI200-06A8T
Microsemi Corporation
APTGF90DA60TG
Infineon Technologies
BSM50GD120DN2G
Microsemi Corporation